STN1304 n channel enhancement mode mosfet 2.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com STN1304 2005. v1 description STN1304 is the n-channel logic enhancement mode pow er field effect transistor which is produced using high cell density, dmos trench te chnology.this high density process is especially tailored to minimize on-state resista nce.these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, a nd low in-line power loss are required. the product is in a very small outline su rface mount package. pin configuration sot-323 1.gate 2.source 3.drain part marking sot-323 y: year code a: process code feature 20v/2.0a, r ds(on) = 225m? @vgs = 4.5v 20v/1.5a, r ds(on) = 315m? @vgs = 2.5v 20v/1.0a, r ds(on) = 425m? @vgs = 4.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability sot-323 package design 3 1 2 d g s 3 1 2 04ya
STN1304 n channel enhancement mode mosfet 2.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com STN1304 2005. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous drain currenttj=150 ) t a =25 t a =70 i d 2.0 1.5 a pulsed drain current i dm 10 a continuous source current (diode conduction) i s 1.6 a power dissipation t a =25 t a =70 p d 1.25 0.8 w operation junction temperature t j 150 storgae temperature range t stg -55/150 thermal resistance-junction to ambient r ja 105 /w
STN1304 n channel enhancement mode mosfet 2.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com STN1304 2005. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua 0.35 1.0 v gate leakage current i gss v ds =0v,v gs = 12v 100 na v ds =20v,v gs =0v 1 zero gate voltage drain current i dss v ds =20v,v gs =0v t j =55 5 ua drain-source on-resistance r ds(on) v gs =4.5v,i d =2.0a v gs =2.5v,i d =1.5a v gs =1.8v,i d =1.0a 0.150 0.210 0.320 0.225 0.315 0.425 forward transconductance g fs v ds =10v,i d =1.2a 10 s diode forward voltage v sd i s =0.5a,v gs =0v 0.80 1.2 v dynamic total gate charge q g 1.2 1.5 gate-source charge q gs 0.2 gate-drain charge q gd v ds =10v v gs =4.5v i d 0.7a 0.3 nc input capacitance c iss 110 output capacitance c oss 34 reverse transfer capacitance c rss v ds =10v v gs =0v f=1mh z 16 pf 5 10 turn-on time t d(on) tr 8 15 10 18 turn-off time t d(off) tf v dd =10v r l =10 i d =1.0a v gen =4.5v r g =6 1.2 2.8 ns
STN1304 n channel enhancement mode mosfet 2.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com STN1304 2005. v1 typical characterictics (25 unless noted)
STN1304 n channel enhancement mode mosfet 2.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com STN1304 2005. v1 typical characterictics (25 unless noted)
STN1304 n channel enhancement mode mosfet 2.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com STN1304 2005. v1 sot-323 package outline
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